• DocumentCode
    1289556
  • Title

    Slotted-resonator gyrotron experiments

  • Author

    Spira-Hakkarainen, S. ; Kreischer, K. ; Temkin, Richard J.

  • Author_Institution
    Plasma Fusion Center, MIT, Cambridge, MA, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    1544
  • Lastpage
    1552
  • Abstract
    Gyrotron experiments in which a waveguide cavity with ten slots cut through the cavity wall is used have been conducted. The gyrotron used a magnetron injection gun operating at 65-75 kV and up to 10 A in 1-μs pulsed operation. Both open configurations, where the radiation can partially leak out of the resonator through the slots, and a configuration where the radiation is trapped by a foil sheath wrapped around the outside of the resonator were used. The observed power levels, in the 10-kW range, are lower than the power generated with an unslotted cavity. The foil sheath configuration produced a result with nearly continuous frequency tuning observed in the frequency range of 186.3-200.6 GHz (7.47-8.04 T). The frequency pulling due to changes in the magnetic field at the cathode or at the resonator was significantly larger than has been typically observed in an unslotted cavity. Frequency tuning due to changes in the parallel electron beam velocity was observed. This device has potential applications in the development of an electronically tunable gyrotron source
  • Keywords
    gyrotrons; 1 mus; 10 A; 10 kW; 186.3 to 200.6 GHz; 65 to 75 kV; 7.47 to 8.04 T; electronically tunable gyrotron source; foil sheath configuration; frequency pulling; frequency range; gyrotron experiments; magnetron injection gun; open configurations; parallel electron beam velocity; power levels; pulsed operation; slotted resonator gyrotron; unslotted cavity; waveguide cavity; Cathodes; Electron beams; Frequency; Gyrotrons; Helium; Magnetic fields; Plasmas; Power generation; Power system harmonics; Tuning;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.81652
  • Filename
    81652