Title :
Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units
Author :
Suzuki, A. ; Watanabe, Toshio ; Kamakura, Yoshinari ; Kamioka, Takefumi
Author_Institution :
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer characteristic of a gate-all-around nanowire Si MOSFET is simulated by reproducing the field effect of the surrounding gate electrode with spreading charged particles on the gate insulator layer. We have found an appreciable impact of the random dopant distribution (RDF) in source and drain regions on the drain current variability. Furthermore, the dynamic fluctuation of the drain current is found to be increase as the channel length decreases. The EMC/MD simulation powered by GPU is a useful method to investigate the dynamic fluctuation as well as the statistical device-to-device variability of nano-scale FETs.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; graphics processing units; molecular dynamics method; nanowires; semiconductor device models; silicon; Si; ensemble Monte Carlo simulation; full-scale whole device EMC-MD simulation; gate electrode; gate-all-around nanowire silicon MOSFET; graphic processing unit; molecular dynamics simulation; random dopant distribution; silicon nanowire transistor; source-drain regions; Computational modeling; Electromagnetic compatibility; Fluctuations; Graphics processing units; Logic gates; Resource description framework; Silicon; Graphic Processing Unit (GPU); Si nanowire Transistor; ensemble Monte Carlo/molecular dynamics (EMC/MD); random dopant fluctuation (RDF); random telegraph noise (RTN);
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931637
