Title :
Design techniques for high-resolution current-mode sigma-delta modulators
Author :
Moeneclaey, Nicolas ; Kaiser, Andreas
Author_Institution :
Dept. ISEN, CNRS, Lille, France
fDate :
7/1/1997 12:00:00 AM
Abstract :
This paper describes techniques for the design of high-resolution oversampling analog-to-digital converters based on current memories. A key point is the reduction of nonlinearities, in particular those introduced by the current switches. A current-memory cell with very high precision and linearity has been designed and used in an experimental third-order Σ-δ modulator in a 0.8-μm digital CMOS process. A linearity of better than 14 b and a maximum signal-to-noise+distortion ratio (SNDR) of 80 dB has been measured for an oversampling ratio (OSR) of 64
Keywords :
CMOS integrated circuits; cellular arrays; integrated circuit design; sigma-delta modulation; 0.8 micron; current memories; current switches; current-memory cell; digital CMOS process; high-resolution current-mode sigma-delta modulators; linearity; nonlinearities; oversampling ratio; signal-to-noise+distortion ratio; Analog-digital conversion; Baseband; Capacitors; Circuit noise; Clocks; Delta-sigma modulation; Linearity; Multi-stage noise shaping; Signal to noise ratio; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
