Title :
Three-terminal bistable switches in effective-mass superlattices
Author :
Aishima, A. ; Fukushima, Yasuhiro
Author_Institution :
Dept. of Electron. Eng., Hiroshima Univ.
fDate :
1/7/1988 12:00:00 AM
Abstract :
Three-terminal bistable switching devices based on effective-mass superlattices are proposed and analysed. The essential feature of the device is the presence of negative resistance controlled by the small gate voltage. The threshold voltage of negative resistance is much lower and the current density is much higher than those in the resonant tunnelling diodes. Such properties are very desirable for achieving low-power ultrafast three-terminal bistable switches
Keywords :
negative resistance effects; semiconductor device models; semiconductor superlattices; semiconductor switches; transistors; current density; effective-mass superlattices; fast switches; low-power ultrafast three-terminal bistable switches; negative resistance; operation; properties; quantum mechanical reflection effect; resonant tunnelling diodes; small gate voltage; threshold voltage of negative resistance;
Journal_Title :
Electronics Letters
