A new multiharmonic loading method for large-signal microwave and millimeter-wave transistor characterization

Author

Ghannouchi, Fadhel M. ; Larose, Robert ; Bosisio, Renato G.

Author_Institution

Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada

Volume

39

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

986

Lastpage

992

Abstract

A multiharmonic loading method for nonlinear microwave and millimeter-wave transistor characterization using six-port techniques is presented. The system allows independent load tuning of an excitation signal and its harmonics. Load-pull measurements on a MESFET which have been performed at the fundamental frequency f₀ and at the second (2f₀) and third (3f₀) harmonics are discussed. The results highlight the importance of such measurement in designing and modeling nonlinear devices and circuits. The experimental results are found to be directly applicable for optimizing efficiency and output power in high-power MESFET amplifiers and MESFET frequency multipliers

Keywords

Schottky gate field effect transistors; automatic test equipment; automatic testing; microwave measurement; semiconductor device testing; solid-state microwave devices; transistors; tuning; MESFET; excitation signal; large signal characterisation; load tuning; load-pull measurements; microwave transistor; millimeter-wave; multiharmonic loading method; nonlinear devices; six-port techniques; transistor characterization; Circuits; Frequency measurement; High power amplifiers; MESFETs; Microwave theory and techniques; Millimeter wave transistors; Performance evaluation; Power amplifiers; Power generation; Tuning;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.81668

Filename

81668