Molecular beam epitaxial growth of GaAs on silicon with buried implanted oxides

Author

Das, Krishanu ; Humphreys, T.P. ; Wortman, J.J. ; Posthill, J.B. ; Parikh, N.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC

Volume

24

Issue

1

fYear

1988

fDate

1/7/1988 12:00:00 AM

Firstpage

67

Lastpage

68

Abstract

Reports the first results of direct growth of GaAs by molecular beam epitaxy on nominally (100) oriented silicon with buried implanted oxides. Rutherford backscattering and transmission electron microscopy techniques have been used to characterise these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junctions; silicon; substrates; GaAs-Si heteroepitaxy; MBE; Rutherford backscattering; SOI; Si; antiphase domain boundaries; buried implanted oxides; direct growth; dislocations; formation of hillocks; microtwins; molecular beam epitaxy; nominally (100) oriented; predominant defects; semiconductor on insulator; semiconductors; transmission electron microscopy; twinning; uniform layer of GaAs;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

8168