• DocumentCode
    1289778
  • Title

    The impact of transistor sizing on power efficiency in submicron CMOS circuits

  • Author

    Rogenmoser, Robert ; Kaeslin, Hubert

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    32
  • Issue
    7
  • fYear
    1997
  • fDate
    7/1/1997 12:00:00 AM
  • Firstpage
    1142
  • Lastpage
    1145
  • Abstract
    Transistor size optimization is one method to reduce the power dissipation of CMOS very large scale integration (VLSI) circuits. Analysis shows that parasitic capacitances and velocity saturation of submicron technologies favor wider than minimum transistor sizes. The reason is that they allow for a larger reduction of the supply voltage which results in more substantial power savings. SPICE simulation of prescalers with differently scaled transistors confirm the analysis. The same prescaler has been implemented in a 1.0-μm CMOS technology with minimum sized transistors and with optimized transistors for high speed. Measurements confirm that power dissipation is reduced for optimized transistor sizes
  • Keywords
    CMOS integrated circuits; VLSI; circuit optimisation; integrated circuit layout; 1 micron; VLSI circuits; parasitic capacitances; power dissipation reduction; power efficiency; prescaler; size optimization; submicron CMOS circuits; supply voltage; transistor sizing; velocity saturation; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Optimization methods; Parasitic capacitance; Power dissipation; SPICE; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.597307
  • Filename
    597307