DocumentCode
1289778
Title
The impact of transistor sizing on power efficiency in submicron CMOS circuits
Author
Rogenmoser, Robert ; Kaeslin, Hubert
Author_Institution
Intel Corp., Santa Clara, CA, USA
Volume
32
Issue
7
fYear
1997
fDate
7/1/1997 12:00:00 AM
Firstpage
1142
Lastpage
1145
Abstract
Transistor size optimization is one method to reduce the power dissipation of CMOS very large scale integration (VLSI) circuits. Analysis shows that parasitic capacitances and velocity saturation of submicron technologies favor wider than minimum transistor sizes. The reason is that they allow for a larger reduction of the supply voltage which results in more substantial power savings. SPICE simulation of prescalers with differently scaled transistors confirm the analysis. The same prescaler has been implemented in a 1.0-μm CMOS technology with minimum sized transistors and with optimized transistors for high speed. Measurements confirm that power dissipation is reduced for optimized transistor sizes
Keywords
CMOS integrated circuits; VLSI; circuit optimisation; integrated circuit layout; 1 micron; VLSI circuits; parasitic capacitances; power dissipation reduction; power efficiency; prescaler; size optimization; submicron CMOS circuits; supply voltage; transistor sizing; velocity saturation; Analytical models; CMOS technology; Circuit analysis; Circuit simulation; Optimization methods; Parasitic capacitance; Power dissipation; SPICE; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.597307
Filename
597307
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