DocumentCode :
1289790
Title :
Low voltage performance of a microwave CMOS Gilbert cell mixer
Author :
Sulivan, P.J. ; Xavier, B.A. ; Ku, W.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume :
32
Issue :
7
fYear :
1997
fDate :
7/1/1997 12:00:00 AM
Firstpage :
1151
Lastpage :
1155
Abstract :
This paper demonstrates the low voltage operation of a doubly balanced Gilbert mixer fabricated in a 0.8-μm CMOS process and operating as both a down-converter and an up-converter. As a down-converter with an RF input of 1.9 GHz, the mixer has a single sideband noise figure as low as 7.8 dB and achieved down-conversion gain for supply voltages as low as 1.8 V. As an up-converter, the mixer demonstrates 10 dB of conversion gain at an RF frequency of 2.4 GHz with an applied local oscillator (LO) power of -7 dBm and LO-RF/LO-IF isolation of at least 30 dB. Up-conversion gain was achieved over a 5-GHz bandwidth and at supply voltages as low as 1.5 V. The mixer presented demonstrates the lowest single side band noise figure for a CMOS doubly balanced down-converting mixer and the highest frequency of operation for a mixer fabricated in CMOS technology to date
Keywords :
CMOS analogue integrated circuits; MMIC frequency convertors; MMIC mixers; integrated circuit noise; 0.8 micron; 1.5 V; 1.8 V; 1.9 GHz; 10 dB; 2.4 GHz; 5 GHz; 7.8 dB; CMOS process; LO-RF/LO-IF isolation; applied local oscillator power; conversion gain; doubly balanced Gilbert mixer; down-converter; microwave mixer; single sideband noise figure; supply voltages; up-converter; CMOS process; CMOS technology; Frequency conversion; Gain; Local oscillators; Low voltage; Mixers; Noise figure; Radio frequency; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.597309
Filename :
597309
Link To Document :
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