Title :
Calibration procedure for irradiation tests on silicon devices
Author :
Cattaneo, Paolo Walter
Author_Institution :
Max-Planck-Inst. fuer Phys. & Astrophys., Muenchen, Germany
fDate :
6/1/1991 12:00:00 AM
Abstract :
The problems of dosimetry encountered during irradiation tests on silicon devices using different radiation sources are discussed. The use of the p-i-n diode BPW 34 from Siemens as a calibration device is described. Its response and limitations at different radiation environments, bias voltages, and integrated absorbed doses are discussed. The experimental results on the dependence of the photocurrent on the bias voltage fitted with theoretical expectations
Keywords :
calibration; dosimetry; p-i-n diodes; photodiodes; radiation hardening (electronics); semiconductor device testing; semiconductor devices; BPW 34; Si devices; bias voltages; calibration; dosimetry; integrated absorbed doses; irradiation tests; p-i-n diode; photocurrent; Absorption; Calibration; Dosimetry; Electromagnetic scattering; Electron accelerators; Ionizing radiation; Large Hadron Collider; Particle scattering; Silicon devices; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
