DocumentCode
1289808
Title
Calibration procedure for irradiation tests on silicon devices
Author
Cattaneo, Paolo Walter
Author_Institution
Max-Planck-Inst. fuer Phys. & Astrophys., Muenchen, Germany
Volume
38
Issue
3
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
894
Lastpage
900
Abstract
The problems of dosimetry encountered during irradiation tests on silicon devices using different radiation sources are discussed. The use of the p-i-n diode BPW 34 from Siemens as a calibration device is described. Its response and limitations at different radiation environments, bias voltages, and integrated absorbed doses are discussed. The experimental results on the dependence of the photocurrent on the bias voltage fitted with theoretical expectations
Keywords
calibration; dosimetry; p-i-n diodes; photodiodes; radiation hardening (electronics); semiconductor device testing; semiconductor devices; BPW 34; Si devices; bias voltages; calibration; dosimetry; integrated absorbed doses; irradiation tests; p-i-n diode; photocurrent; Absorption; Calibration; Dosimetry; Electromagnetic scattering; Electron accelerators; Ionizing radiation; Large Hadron Collider; Particle scattering; Silicon devices; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.81690
Filename
81690
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