Series connection of power switches for very high-power applications and zero-voltage switching

Author

Watanabe, Edson Hirokazu ; Aredes, Maurício ; De Souza, Luiz Felipe Willcox ; Bellar, Maria D.

Author_Institution

COPPE, Univ. Fed. do Rio de Janeiro, Brazil

Volume

15

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

44

Lastpage

50

Abstract

The basic theoretical analysis for series connection of semiconductor power switches (valves) for zero-voltage switching (ZVS) is presented. The influences of the switching device parameters on its voltage distribution during steady and transient-state conditions are analyzed. When ZVS technique is used, the design of the voltage equalization elements is easier than when hard switching is used. Simulated results are presented to validate the analysis and design methodology. This work is important for very high-power soft-switching valves and converter designs. As an example to validate the theory, a study based on the gate turn-off thyristor (GTO)-controlled series capacitor is presented

Keywords

power semiconductor switches; switchgear; switching circuits; voltage distribution; GTO-controlled series capacitor; ZVS; gate turn-off thyristor; semiconductor power switches; series connected power switches; steady-state conditions; switching device parameters; transient-state conditions; very high-power applications; voltage distribution; voltage equalization; zero-voltage switching; Associate members; Capacitors; Circuits; Flexible AC transmission systems; Insulated gate bipolar transistors; Power semiconductor switches; Thyristors; Transient analysis; Valves; Zero voltage switching;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.817361

Filename

817361