Ultralow-threshold cryogenic vertical-cavity surface-emitting laser

Author

Zou, Z. ; Huffaker, D.L. ; Deppe, D.G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

12

Issue

1

fYear

2000

Firstpage

1

Lastpage

3

Abstract

Data are presented characterizing a low-threshold vertical-cavity surface-emitting laser designed for cryogenic operation. A threshold current of 12 μA and current density of 25 A/cm² are obtained at 77 K with the low-loss cavity design. From 77 K to 160 K, the threshold increases linearly with temperature, but only approximately tracks the detuning of the cavity resonance from the minimum energy transition of the quantum well. At 77 K, we estimate that the 25-A/cm² threshold current density is about twice that required for transparency.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; current density; gallium arsenide; laser cavity resonators; quantum well lasers; surface emitting lasers; 12 muA; 77 to 160 K; AlGaAs-GaAs; AlGaAs/GaAs ultralow-threshold cryogenic VCSEL; cavity resonance detuning; cryogenic operation; current density; low-loss cavity design; minimum energy transition; quantum well; threshold current; transparency; vertical-cavity surface-emitting laser; Cryogenics; Excitons; Laser transitions; Optical interconnections; Quantum dot lasers; Quantum well lasers; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.817427

Filename

817427