Title :
High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
Author :
Kageyama, T. ; Miyamoto, T. ; Makino, S. ; Nishiyama, N. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 μm with different composition at room temperature. The highest lasing operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K were obtained for 300-μm-long lasers at 1.2 μm.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; high-temperature electronics; indium compounds; quantum well lasers; semiconductor growth; 1.2 to 1.27 mum; 170 C; 300 mum; GaInNAs-GaAs; GaInNAs-GaAs double-quantum-well lasers; characteristic temperature; chemical beam epitaxy; high-temperature pulsed operation; lasing operation temperature; lasing wavelength; temperature dependence; threshold current density; Chemical lasers; Epitaxial growth; Laser beams; Molecular beam epitaxial growth; Nitrogen; Optical pulses; Plasma temperature; Quantum well lasers; Radio frequency; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
