Demonstration of a 77-GHz heterojunction bipolar transferred electron device

Author

Twynam, J.K. ; Yagura, M. ; Takahashi, N. ; Suematsu, E. ; Sato, H.

Author_Institution

Adv. Technol. Res., Sharp Corp., Nara, Japan

Volume

21

Issue

1

fYear

2000

Firstpage

2

Lastpage

4

Abstract

We demonstrate for the first time a heterojunction bipolar transferred electron device (HBTED), a device with a bipolar transistor-like structure in which Gunn oscillations occur. The use of a graded doping profile in the collector region is, we believe, a key factor in the device design. AlGaAs/GaAs HBTEDs fabricated on semi-insulating GaAs substrates exhibit free-running oscillations at a frequency of around 77 GHz. The third (emitter) terminal enables this device to be injection-locked and to function as a self-oscillating mixer.

Keywords

Gunn oscillators; III-V semiconductors; aluminium compounds; bipolar MIMIC; current density; doping profiles; gallium arsenide; heterojunction bipolar transistors; injection locked oscillators; millimetre wave generation; millimetre wave mixers; 77 GHz; AlGaAs-GaAs; Gunn oscillations; HBTED; III-V semiconductors; bipolar transistor-like structure; collector region; free-running oscillations; graded doping profile; heterojunction bipolar transferred electron device; injection-locked device; self-oscillating mixer; Bipolar transistors; Diodes; Doping profiles; Electrons; Frequency; Gallium arsenide; Gunn devices; Heterojunctions; Injection-locked oscillators; Millimeter wave transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.817434

Filename

817434