Improved immunity to plasma damage in ultrathin nitrided oxides [CMOS technology]

Author

Chen, Chi-Chun ; Lin, Horng-Chih ; Chang, Chun-Yen ; Liang, Mong-Song ; Chien, Chao-Hsin ; Hsien, Szu-Kang ; Huang, Tiao-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

1

fYear

2000

Firstpage

15

Lastpage

17

Abstract

Plasma-induced damage in various 3-nm thick gate oxides (i.e., pure O/sub 2/ and N/sub 2/O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as at the wafer edge for pMOS devices, while it occurs only at the wafer center for nWOS devices. These interesting observations could be explained by the polarity dependence of ultrathin oxides in charge-to-breakdown measurements. Additionally, ultrathin N/sub 2/O-nitrided oxides show superior immunity to charging damage, especially for pMOS devices.

Keywords

CMOS integrated circuits; MOSFET; leakage currents; nitridation; semiconductor device breakdown; semiconductor device reliability; sputter etching; surface charging; 3 nm; CMOS test transistors; N/sub 2/O; N/sub 2/O-nitrided oxides; Si-SiO/sub 2/; Si-SiON; charge-to-breakdown measurements; charging damage; gate leakage current measurements; metal pad definition; nMOS antenna devices; pMOS antenna devices; photoresist ashing step; plasma damage immunity improvement; polarity dependence; pure O/sub 2/ oxides; reliability; ultrathin nitrided oxides; wafer center; wafer edge; CMOS technology; Current measurement; Dielectric breakdown; Leakage current; MOS devices; Monitoring; Plasma applications; Plasma devices; Plasma properties; Resists;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.817438

Filename

817438