Title :
Hydrogenated amorphous silicon thin-film transistor with a thin gate insulator
Author :
Choi, Young Jin ; Kwak, Won Kyu ; Cho, Kyu Sik ; Kim, Sung Ki ; Jang, Jin
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
Abstract :
Thinning the gate insulator in an hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied in a coplanar structure. The threshold voltage decreases with decreasing gate insulator thickness without changing the field effect mobility significantly. The reduction in the threshold voltage is due to the decrease in the charge traps in the SiN/sub x/ and in its film thickness. The coplanar a-Si:H TFT with a gate insulator thickness of 35 nm exhibited a field effect mobility of 0.45 cm/sup 2//Vs and a threshold voltage of 1.5 V. The thickness of the gate insulator can be decreased in the coplanar a-Si:H TFTs because of the planarized gate insulator.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; insulating thin films; liquid crystal displays; low-power electronics; semiconductor device measurement; silicon; thin film transistors; 1.5 V; 35 nm; LCD; Si:H-SiN; a-Si:H TFT; charge traps; coplanar structure; field effect mobility; film thickness; gate insulator thickness; low power consumption; planarized gate insulator; thin SiN/sub x/ gate insulator; threshold voltage; Amorphous silicon; Energy consumption; Insulation; Liquid crystal displays; MOSFETs; Plasma temperature; Scanning electron microscopy; Silicon compounds; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
