Title :
Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFETs
Author :
Nakamura, Kaori ; Murakami, Eiichi ; Kimura, Shin´ichiro
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have investigated the hot carrier (HC) reliability of nMOSFETs with an ultrashallow source/drain (S/D) extension, and found that lightly doped drain (LDD)-type HC degradation is accelerated. The lifetime strongly depends on the extension implantation dose or the implantation angle. A reduced overlap region between the gate electrode and drain diffusion seemed to exaggerate the LDD-type HC degradation. Angled implantation at over 10/spl deg/ effectively suppressed the degradation.
Keywords :
MOSFET; hot carriers; ion implantation; semiconductor device reliability; semiconductor device testing; 0.2 mum; angled ion implantation; drain diffusion; extension implantation dose; gate electrode; hot carrier reliability; implantation angle; lightly doped drain-type hot carrier degradation; nMOSFET; overlap region; punchthrough stopper implantation dose; ultrashallow junction; ultrashallow source/drain extension; Acceleration; Degradation; Electrodes; Fabrication; Hot carriers; Impact ionization; Ion implantation; MOSFET circuits; Stress; Voltage;
Journal_Title :
Electron Device Letters, IEEE
