A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise

Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (/spl Delta/I/sub d/) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (/spl Delta/V/sub fb/) of the BSIM3 current-voltage (I-V) model (Martin et al., 1997). The model´s accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized. In this letter, the perturbation model has been extended to yield a new formulation for the scattering coefficient (/spl alpha/) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct determination of the oxide trap density (N/sub t/(E/sub fn/)) from 1/f noise measurements. Results suggest that the BSIM3-based model accurately predicts the bias and geometry dependence of 1/f noise, that N/sub 2/O annealing may significantly increase the oxide trap density at strong inversion and that the bias dependence of N/sub t/(E/sub fn/) contains most of the 1/f noise dependence upon V/sub g/.