On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs

Author

Pirovano, A. ; Lacaita, A.L. ; Ghidini, G. ; Tallarida, G.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

21

Issue

1

fYear

2000

Firstpage

34

Lastpage

36

Abstract

A quantitative analysis of the Si/SiO/sub 2/ interface roughness based on atomic force microscope (AFM) and mobility measurements is presented. Our results show that the spatial components of the roughness affecting the carrier transport lie outside the range probed by AFM, thus making questionable the validity of previously published correlations between AFM measurements and carrier mobility. Based on a numerical model of the roughness scattering, a new physically-based correlation is proposed, highlighting the impact, so far overlooked, of the roughness correlation length on the carrier mobility.

Keywords

MOSFET; atomic force microscopy; carrier mobility; interface roughness; inversion layers; semiconductor device models; surface scattering; surface topography; AFM; MOSFET; Si-SiO/sub 2/; Si/SiO/sub 2/ interface roughness; carrier mobility; carrier transport; inversion layer mobility; numerical model; physically-based correlation; roughness correlation length; roughness scattering; spatial roughness components; surface roughness; Atomic force microscopy; Atomic measurements; Etching; Force measurement; Numerical models; Rough surfaces; Scattering; Surface morphology; Surface roughness; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.817444

Filename

817444