• DocumentCode
    1290587
  • Title

    High-voltage devices for 0.5-μm standard CMOS technology

  • Author

    Bassin, C. ; Ballan, H. ; Declercq, M.

  • Author_Institution
    Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    21
  • Issue
    1
  • fYear
    2000
  • Firstpage
    40
  • Lastpage
    42
  • Abstract
    The feasibility of the smart voltage extension (SVX) technique featuring complementary high-voltage devices without any modifications of the process steps of an 0.5-μm standard CMOS technology is discussed here. This letter focuses on the optimization of the breakdown voltage of the HVNMOS as well as the possible implementation of the HVPMOS. Different high-voltage options with increasing process modification steps are discussed as a function of the required high-voltage capabilities.
  • Keywords
    CMOS integrated circuits; power MOSFET; power integrated circuits; semiconductor device breakdown; 0.5 mum; CMOS technology; HVNMOS; HVPMOS; breakdown voltage optimization; complementary high-voltage devices; high-voltage devices; process modification steps; smart voltage extension technique; CMOS technology; Current density; Doping; Electrons; Electrostatics; Immune system; MOSFETs; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.817446
  • Filename
    817446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290587