• DocumentCode
    1290617
  • Title

    Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

  • Author

    Cheng, C.H. ; Chin, Albert ; Yeh, F.S.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    31
  • Issue
    9
  • fYear
    2010
  • Firstpage
    1020
  • Lastpage
    1022
  • Abstract
    Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 ° C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.
  • Keywords
    dielectric materials; nickel compounds; random-access storage; Ni-GeO-STO-TaN; low-resistance state; metal-oxide resistive random access memory; metallic filament; stacked covalent-bond-dielectric; ultralow-power resistive switching memory; Argon; Atherosclerosis; Degradation; Electrodes; Nickel; Nonvolatile memory; Random access memory; Resistance; Scalability; Semiconductor diodes; Silicon; Stacking; Switches; Temperature measurement; $hbox{GeO}_{2}$; $hbox{SrTiO}_{3}$ (STO); resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2055828
  • Filename
    5545348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290617