A Physical Model for Post-Breakdown Digital Gate Current Noise

Author

Padovani, Andrea ; Morassi, Luca ; Raghavan, Nagarajan ; Larcher, Luca ; Wenhu Liu ; Pey, Kin Leong ; Bersuker, Gennadi

Author_Institution

DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy

Volume

31

Issue

9

fYear

2010

Firstpage

1032

Lastpage

1034

Abstract

We present a new physical model that enables us to reproduce the digital gate current random telegraph noise fluctuations observed in ultrathin SiON dielectrics in the early stages of post-breakdown (BD). Gate current (I_G) fluctuations are modeled assuming that some traps in the BD path switch between two unstable configurations, corresponding to neutral and negatively charged O vacancies. The energy levels of the trap considered in simulations here are consistent with the values calculated from atomistic simulations. The model allows one to reproduce accurately the mean and variation in the I_G fluctuations observed on 16- and 22-Å-thick SiON gate dielectrics at different gate voltages.

Keywords

dielectric materials; energy states; random noise; silicon compounds; switches; tunnelling; BD path switch; SiON; atomistic simulations; digital gate current random telegraph noise fluctuations; energy levels; gate dielectrics; physical model; post-breakdown digital gate current noise; trap-assisted tunneling; ultrathin SiON dielectrics; Breakdown voltage; Circuits; Degradation; Dielectric devices; Dielectrics; Electric breakdown; Electron traps; Energy states; Fluctuations; Logic gates; Silicon; Stress; Switches; Telegraphy; Tunneling; Digital breakdown (Di-BD); oxygen vacancy; oxynitride (SiON); post-breakdown (BD) reliability; soft-BD (SBD); switching traps; trap-assisted tunneling (TAT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2055827

Filename

5545352