Fabrication of thin-film cleaved cavities using a bonding and cleaving fixture

Author

McAlister, D.W. ; McCann, P.J. ; Wu, H.Z. ; Fang, X.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Oklahoma Univ., Norman, OK, USA

Volume

12

Issue

1

fYear

2000

Firstpage

22

Lastpage

24

Abstract

A novel method for the fabrication of cleaved-cavities has been developed that uses a copper plate assembly to support semiconductor layers after substrate removal. PbSe layers were grown through a combination of molecular beam epitaxy and liquid phase epitaxy on Si [100] substrates using CaF/sub 2/ and BaF/sub 2/ buffer layers. After growth the sample was bonded to the edges of a copper plate assembly epilayer down and the BaF/sub 2/ buffer layer was etched away allowing for growth substrate removal. This technique allows fabrication of cleaved Fabry-Perot resonant cavities by separating the copper plates after the substrate is removed.

Keywords

Fabry-Perot resonators; IV-VI semiconductors; etching; joining processes; laser cavity resonators; lead compounds; liquid phase epitaxial growth; molecular beam epitaxial growth; optical fabrication; semiconductor epitaxial layers; Au-In; Au-PbSn; BaF/sub 2/ buffer layers; CaF/sub 2/ buffer layers; Cu; PbSe layers; PbSe-BaF/sub 2/-CaF/sub 2/-Si; Si; Si [100] substrates; bonding; cleaved Fabry-Perot resonant cavities; cleaving fixture; copper plate assembly; epitaxial liftoff; fabrication method; liquid phase epitaxy; molecular beam epitaxy; semiconductor layers; substrate removal; thin-film cleaved cavities; Assembly; Bonding; Buffer layers; Copper; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Semiconductor thin films; Substrates; Transistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.817456

Filename

817456