Title :
Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing
Author :
Yang, Ya-Hui ; Yang, Sidney S. ; Chou, Kan-Sen
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
We applied laser annealing on indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) to improve their electrical characteristics. The IGZO nanoparticles were prepared from a water solution, and the films were fabricated by the spin-coating method and postbaked at a low postbake temperature (95°C). The crystallinity and compositions of the as-deposited film and the laser-annealed films were analyzed by X-ray diffraction. The film morphology and the electrical characteristics of TFTs at various irradiation dosages are also presented. Results show that the field-effect mobility can be improved to 7.65 cm2/V·s.
Keywords :
II-VI semiconductors; X-ray diffraction; gallium compounds; indium compounds; laser beam annealing; nanoparticles; thin film transistors; zinc compounds; IGZO nanoparticles; InGaZnO; TFT; X-ray diffraction; characteristic enhancement; field-effect mobility; film morphology; indium-gallium-zinc oxide; laser annealing; postbake temperature; solution-processed thin-film transistors; spin-coating method; temperature 95 degC; Annealing; Electric variables; Glass; Liquid crystal displays; Nanoparticles; Optical pulses; Radiation effects; Temperature; Thin film transistors; X-ray diffraction; X-ray lasers; Zinc oxide; Laser annealing; metal–oxide–semiconductor devices; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055821
