A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers

Author

Yhland, Klas ; Rorsman, Niklas ; Garcia, Mikael ; Merkel, Harald F.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

48

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

15

Lastpage

22

Abstract

We propose a new symmetrical heterojunction FET (HFET)/MESFET model to predict intermodulation distortion in amplifiers and resistive mixers. The model is symmetric. That is, drain and source of the intrinsic FET are interchangeable. This reflects the characteristics of most microwave FET´s. The model has few fitting parameters and they are simple and straightforward to extract. The model was installed into Hewlett-Packard´s harmonic-balance program microwave design system and verified by measurements. The verification shows excellent results for an MESFET and an HFET in both amplifier and resistive mixer configurations

Keywords

Schottky gate field effect transistors; harmonic analysis; intermodulation distortion; microwave amplifiers; microwave circuits; microwave field effect transistors; microwave mixers; semiconductor device models; HFET; MESFET; fitting parameters; harmonic-balance program; intermodulation analysis; microwave FET; microwave amplifiers; microwave design system; resistive mixers; symmetrical nonlinear model; HEMTs; Heterojunctions; Intermodulation distortion; MESFETs; MODFETs; Microwave FETs; Microwave devices; National electric code; Predictive models; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.817467

Filename

817467