Title :
A symmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers
Author :
Yhland, Klas ; Rorsman, Niklas ; Garcia, Mikael ; Merkel, Harald F.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
1/1/2000 12:00:00 AM
Abstract :
We propose a new symmetrical heterojunction FET (HFET)/MESFET model to predict intermodulation distortion in amplifiers and resistive mixers. The model is symmetric. That is, drain and source of the intrinsic FET are interchangeable. This reflects the characteristics of most microwave FET´s. The model has few fitting parameters and they are simple and straightforward to extract. The model was installed into Hewlett-Packard´s harmonic-balance program microwave design system and verified by measurements. The verification shows excellent results for an MESFET and an HFET in both amplifier and resistive mixer configurations
Keywords :
Schottky gate field effect transistors; harmonic analysis; intermodulation distortion; microwave amplifiers; microwave circuits; microwave field effect transistors; microwave mixers; semiconductor device models; HFET; MESFET; fitting parameters; harmonic-balance program; intermodulation analysis; microwave FET; microwave amplifiers; microwave design system; resistive mixers; symmetrical nonlinear model; HEMTs; Heterojunctions; Intermodulation distortion; MESFETs; MODFETs; Microwave FETs; Microwave devices; National electric code; Predictive models; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
