مرکز منطقه ای اطلاع رساني علوم و فناوري - Germanium–Tin <formula formulatype="inline"> <img src="/images/tex/20486.gif" alt="\\hbox {n}^{+}\\hbox {/p}"> </formula> Junction Formed Using Phosphorus Ion Implant and 400 <formula formulatype="inline"> <img src="/images/tex/18628.gif" alt="^{\\

Title :

Germanium–Tin $\\hbox {n}^{+}\\hbox {/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\\</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Yang, Yue ; Tong, Yi ; Liu, Bin ; Guo, Pengfei ; Gong, Xiao ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>33</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1529</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1531</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>AGe<sub>0.976</sub>Sn<sub>0.024</sub> n<sup>+</sup>/p diode was formed using phosphorus ion (P<sup>+</sup>) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm<sup>2</sup> at -1 V is achieved for the Ge<sub>0.976</sub>Sn<sub>0.024</sub>n<sup>+</sup>/p diode. This is four times higher than that of the Ge n<sup>+</sup>/p control diode, which received the same P<sup>+</sup> implant but activated at 700°C. The n<sup>+</sup>-GeSn region has a high active dopant concentration of 2.1 × 10<sup>19</sup>× cm<sup>-3</sup>, much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n<sup>+</sup>-GeSn and increases the forward bias diode current. Enhancement of P activation in Ge<sub>0.976</sub>Sn<sub>0.024</sub> could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>germanium; ion implantation; p-n junctions; passivation; phosphorus; rapid thermal annealing; semiconductor diodes; tin; tunnelling; Ge-Sn; active dopant concentration; forward bias diode current; n<sup>+-</sup>p control diode; n<sup>+</sup>-p junction; phosphorus ion implant; rapid thermal annealling; temperature 400 degC; temperature 700 degC; tunneling barrier; vacancy passivation; voltage -1 V; Doping; Germanium; Ion implantation; Junctions; MOSFETs; Rapid thermal annealing; Semiconductor diodes; Tin; <formula formulatype=$ $ hbox{n}^{+}hbox{/p}$ junction; Dopant activation; GeSn;