• DocumentCode
    1290779
  • Title

    Germanium–Tin \\hbox {n}^{+}\\hbox {/p} Junction Formed Using Phosphorus Ion Implant and 400 ^{\\</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Wang, Lanxiang ; Su, Shaojian ; Wang, Wei ; Yang, Yue ; Tong, Yi ; Liu, Bin ; Guo, Pengfei ; Gong, Xiao ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Han, Genquan ; Yeo, Yee-Chia</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>33</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>11</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2012</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1529</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1531</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>AGe<sub>0.976</sub>Sn<sub>0.024</sub> n<sup>+</sup>/p diode was formed using phosphorus ion (P<sup>+</sup>) implant and rapid thermal annealing at 400°C. Activation of P in Ge typically requires high temperatures (e.g., 700°C), and it was found that this is not needed in the presence of a small amount of Sn. A high forward bias current of 320 A/cm<sup>2</sup> at -1 V is achieved for the Ge<sub>0.976</sub>Sn<sub>0.024</sub>n<sup>+</sup>/p diode. This is four times higher than that of the Ge n<sup>+</sup>/p control diode, which received the same P<sup>+</sup> implant but activated at 700°C. The n<sup>+</sup>-GeSn region has a high active dopant concentration of 2.1 × 10<sup>19</sup>× cm<sup>-3</sup>, much higher than that in the Ge control. The increased active dopant concentration in GeSn reduces the width of the tunneling barrier between the Al contact and the n<sup>+</sup>-GeSn and increases the forward bias diode current. Enhancement of P activation in Ge<sub>0.976</sub>Sn<sub>0.024</sub> could possibly be as a result of passivation of vacancies in the Ge lattice due to Sn atoms.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>germanium; ion implantation; p-n junctions; passivation; phosphorus; rapid thermal annealing; semiconductor diodes; tin; tunnelling; Ge-Sn; active dopant concentration; forward bias diode current; n<sup>+-</sup>p control diode; n<sup>+</sup>-p junction; phosphorus ion implant; rapid thermal annealling; temperature 400 degC; temperature 700 degC; tunneling barrier; vacancy passivation; voltage -1 V; Doping; Germanium; Ion implantation; Junctions; MOSFETs; Rapid thermal annealing; Semiconductor diodes; Tin; <formula formulatype=$ hbox{n}^{+}hbox{/p}$ junction; Dopant activation; GeSn;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2212871
  • Filename
    6311421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290779