• DocumentCode
    1290799
  • Title

    A class-E power amplifier based on an extended resonance technique

  • Author

    Martin, Adam L. ; Mortazawi, Amir

  • Author_Institution
    ITT GaAs Tek, Roanoke, VA, USA
  • Volume
    48
  • Issue
    1
  • fYear
    2000
  • fDate
    1/1/2000 12:00:00 AM
  • Firstpage
    93
  • Lastpage
    97
  • Abstract
    In this paper, a class-E power amplifier using four 1-W GaAs MESFET´s at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET´s with 67% power-added efficiency at 935 MHz
  • Keywords
    III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; microstrip circuits; power combiners; 1 W; 67 percent; 935 MHz; GaAs; III-V semiconductors; MESFETs; MMIC amplifiers; Siemens CLY5; class-E power amplifier; extended resonance technique; microstrip amplifier; power-added efficiency; power-combining technique; Circuit topology; Distributed amplifiers; Gallium arsenide; Impedance; MESFETs; Microstrip; Power amplifiers; Power transmission lines; Resonance; Transmission lines;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.817476
  • Filename
    817476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290799