Title :
A class-E power amplifier based on an extended resonance technique
Author :
Martin, Adam L. ; Mortazawi, Amir
Author_Institution :
ITT GaAs Tek, Roanoke, VA, USA
fDate :
1/1/2000 12:00:00 AM
Abstract :
In this paper, a class-E power amplifier using four 1-W GaAs MESFET´s at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET´s with 67% power-added efficiency at 935 MHz
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF power amplifiers; gallium arsenide; microstrip circuits; power combiners; 1 W; 67 percent; 935 MHz; GaAs; III-V semiconductors; MESFETs; MMIC amplifiers; Siemens CLY5; class-E power amplifier; extended resonance technique; microstrip amplifier; power-added efficiency; power-combining technique; Circuit topology; Distributed amplifiers; Gallium arsenide; Impedance; MESFETs; Microstrip; Power amplifiers; Power transmission lines; Resonance; Transmission lines;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
