Title :
On-state distortion in high electron mobility transistor microwave and RF switch control circuits
Author :
Caverly, Robert H. ; Heissler, Kennith J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
fDate :
1/1/2000 12:00:00 AM
Abstract :
The origin of the distortion generating mechanism in microwave and RF control circuits using high electron-mobility transistors (HEMTs) is presented in this paper. A model is presented for predicting the distortion in series-connected HEMT switches. The theoretical discussion shows that turn-off voltages in the range of 1.0-1.5 V provide the lowest distortion in series switch configurations. A comparison of the HEMT snitch with MESFET switches shows that the HEMT switch generates more distortion than its MESFET counterpart. In addition, the frequency response of HEMT switches is the opposite of the MESFET switch, with less distortion at low frequencies. The model is validated with experimental data taken on a AlGaAs/GaAs HEMT in the series switch configuration
Keywords :
III-V semiconductors; aluminium compounds; electric distortion; field effect transistor switches; frequency response; gallium arsenide; microwave circuits; microwave switches; 1.0 to 1.5 V; AlGaAs-GaAs; III-V semiconductors; distortion generating mechanism; frequency response; high electron mobility transistor; on-state distortion; series-connected HEMT switches; switch control circuits; turn-off voltages; Frequency response; HEMTs; MESFETs; MODFETs; Microwave circuits; Microwave generation; Predictive models; Radio frequency; Switches; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
