Intermodulation distortion in pseudomorphic HEMTs and an extension of the classical theory

Author

Bailey, Michael Jon

Author_Institution

Filtronic Solid State, Santa Clara, CA, USA

Volume

48

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

104

Lastpage

110

Abstract

Pseudomorphic high electron-mobility transistors (pHEMTs) offer superior RF and microwave performance and, in particular, exhibit exceptional intermodulation distortion characteristics that are not adequately modeled by the classical theory. Intermodulation products are typically 8-10 dB below classical expectations, and can be as much as 12 dB lower. An extension of the classical theory is presented, which allows for a better understanding of this phenomenon in terms of the device transconductance characteristic. Experimental data is included to provide quantitative verification based on both device and amplifier results. pHEMT-based devices have the potential to satisfy the spectral performance requirements of today´s wireless systems with improved dc-to-RF efficiencies

Keywords

UHF field effect transistors; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; UHF performance; classical theory extension; dc-to-RF efficiencies; device transconductance characteristic; intermodulation distortion; microwave performance; pseudomorphic HEMTs; quantitative verification; spectral performance requirements; wireless systems; Base stations; HEMTs; Heterojunction bipolar transistors; Intermodulation distortion; Linearity; PHEMTs; Power amplifiers; Power generation; Quadrature phase shift keying; Telephone sets;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.817478

Filename

817478