Title :
Intermodulation distortion in pseudomorphic HEMTs and an extension of the classical theory
Author :
Bailey, Michael Jon
Author_Institution :
Filtronic Solid State, Santa Clara, CA, USA
fDate :
1/1/2000 12:00:00 AM
Abstract :
Pseudomorphic high electron-mobility transistors (pHEMTs) offer superior RF and microwave performance and, in particular, exhibit exceptional intermodulation distortion characteristics that are not adequately modeled by the classical theory. Intermodulation products are typically 8-10 dB below classical expectations, and can be as much as 12 dB lower. An extension of the classical theory is presented, which allows for a better understanding of this phenomenon in terms of the device transconductance characteristic. Experimental data is included to provide quantitative verification based on both device and amplifier results. pHEMT-based devices have the potential to satisfy the spectral performance requirements of today´s wireless systems with improved dc-to-RF efficiencies
Keywords :
UHF field effect transistors; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device models; UHF performance; classical theory extension; dc-to-RF efficiencies; device transconductance characteristic; intermodulation distortion; microwave performance; pseudomorphic HEMTs; quantitative verification; spectral performance requirements; wireless systems; Base stations; HEMTs; Heterojunction bipolar transistors; Intermodulation distortion; Linearity; PHEMTs; Power amplifiers; Power generation; Quadrature phase shift keying; Telephone sets;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
