DocumentCode
1290860
Title
Migration of Sintered Nanosilver Die-Attach Material on Alumina Substrate Between 250
and 400
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290860
. The silver migration was found in the samples tested at 400°C, 350°C, 300°C, and 250°C. The measurements on the leakage current versus time were characterized by an initial incubation period, called “lifetime,” followed by a sharp rise as the silver dendrites were shorting the electrodes. A simple phenomenological model was derived to account for the observed dependence of lifetime on the electric field and temperature. The EDS mappings revealed the significant presence of oxygen on the positive electrode but the complete absence on the negative electrode. A mechanism involving the oxidation of silver and the dissociation of silver oxide at the anode was suggested. We suggest that the migration of a sintered nanosilver die attachment can be prevented in high-temperature applications through packaging or encapsulation to reduce the partial pressure of oxygen.</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>X-ray chemical analysis; joining processes; leakage currents; microassembling; nanostructured materials; optical microscopy; power electronics; scanning electron microscopy; sintering; Ag; Al<sub>2</sub>O<sub>3</sub>; EDS; EDS mappings; alternative lead-free solution; alumina substrate; dendrites; dry air; electrode gap; energy dispersive spectroscopy; high-temperature environment; leakage currents; low-temperature joining; nanosilver die-attach material; optical microscopy; phenomenological model; power electronics devices; scanning electron microscopy; semiconductor chips; silver migration; sintering; temperature 250 degC to 400 degC; Current measurement; Electrodes; Leakage current; Nanostructured materials; Optical microscopy; Scanning electron microscopy; Semiconductor materials; Silver; Substrates; Temperature; High-temperature packaging; low-temperature sintering of nanosilver paste; silver migration; sintered die attach;</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Device and Materials Reliability, IEEE Transactions on</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1530-4388</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/TDMR.2010.2064775</div></div>
</li>
<li class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>5545383</div></div>
</li>
<div class='list-group-item border-0 py-3 px-0'>
<div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290860' target='_blank' rel=)
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290860