• DocumentCode
    129093
  • Title

    Suppressing Fine-frequency modes in Aluminum Nitride microresonators

  • Author

    Branch, Darren W. ; Olsson, Roy H.

  • Author_Institution
    Biosensors & Nanomater. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2014
  • fDate
    3-6 Sept. 2014
  • Firstpage
    572
  • Lastpage
    577
  • Abstract
    Eliminating spurious modes in Aluminum Nitride (AlN) microresonators improves their insertion loss and quality factor by reducing acoustic energy leakage. Spurious modes that result from transverse wave propagation, termed fine-frequency modes, leak energy and propagate in the electrical busing and appear near the fundamental resonance. Although these modes can be predicted using three-dimensional (3D) finite element methods (FEM) for devices with very short acoustic length (e.g. 1 acoustic wavelength), 3D FEM is very slow and memory intensive when compared to a two-dimensional (2D) simulation. A fast 2D coupling-of-modes (COM) model was developed to predict, identify and implement strategies to suppress the fine-frequency modes.
  • Keywords
    III-V semiconductors; Q-factor; acoustic resonators; acoustic wave propagation; aluminium compounds; finite element analysis; micromechanical resonators; wide band gap semiconductors; 3D FEM; AlN; acoustic energy leakage; acoustic wavelength; aluminum nitride microresonators; fast 2D coupling-of-modes model; fine-frequency modes; quality factor; three-dimensional finite element methods; transverse wave propagation; Acoustics; Fingers; Finite element analysis; III-V semiconductor materials; Microcavities; Three-dimensional displays; Transducers; Aluminum nitride; COM; FEM; Lamb Waves; Spurious Modes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2014 IEEE International
  • Conference_Location
    Chicago, IL
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2014.0141
  • Filename
    6931785