DocumentCode
129093
Title
Suppressing Fine-frequency modes in Aluminum Nitride microresonators
Author
Branch, Darren W. ; Olsson, Roy H.
Author_Institution
Biosensors & Nanomater. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2014
fDate
3-6 Sept. 2014
Firstpage
572
Lastpage
577
Abstract
Eliminating spurious modes in Aluminum Nitride (AlN) microresonators improves their insertion loss and quality factor by reducing acoustic energy leakage. Spurious modes that result from transverse wave propagation, termed fine-frequency modes, leak energy and propagate in the electrical busing and appear near the fundamental resonance. Although these modes can be predicted using three-dimensional (3D) finite element methods (FEM) for devices with very short acoustic length (e.g. 1 acoustic wavelength), 3D FEM is very slow and memory intensive when compared to a two-dimensional (2D) simulation. A fast 2D coupling-of-modes (COM) model was developed to predict, identify and implement strategies to suppress the fine-frequency modes.
Keywords
III-V semiconductors; Q-factor; acoustic resonators; acoustic wave propagation; aluminium compounds; finite element analysis; micromechanical resonators; wide band gap semiconductors; 3D FEM; AlN; acoustic energy leakage; acoustic wavelength; aluminum nitride microresonators; fast 2D coupling-of-modes model; fine-frequency modes; quality factor; three-dimensional finite element methods; transverse wave propagation; Acoustics; Fingers; Finite element analysis; III-V semiconductor materials; Microcavities; Three-dimensional displays; Transducers; Aluminum nitride; COM; FEM; Lamb Waves; Spurious Modes;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2014 IEEE International
Conference_Location
Chicago, IL
Type
conf
DOI
10.1109/ULTSYM.2014.0141
Filename
6931785
Link To Document