Title :
Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module
Author :
Bitter, Martin ; Bauknecht, Raimond ; Hunziker, Werner ; Melchior, Hans
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A fully packaged 40-Gb/s optical receiver module based on monolithic integration of p-i-n photodiodes and single-heterojunction bipolar transistors (HBT) in the InGaAs-InP material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly opened eyes for data rates of 40 Gb/s at a wavelength of 1550 nm.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1550 nm; 40 Gbit/s; InGaAs-InP; InGaAs-InP optical receiver module; conversion gain; electrical broad-band mounting; heterojunction bipolar transistor; monolithic integration; p-i-n photodiode; packaging; Bipolar transistors; Chemical technology; Epitaxial growth; Heterojunction bipolar transistors; Monolithic integrated circuits; Optical materials; Optical receivers; PIN photodiodes; Packaging; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
