Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module

Author

Bitter, Martin ; Bauknecht, Raimond ; Hunziker, Werner ; Melchior, Hans

Author_Institution

Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

12

Issue

1

fYear

2000

Firstpage

74

Lastpage

76

Abstract

A fully packaged 40-Gb/s optical receiver module based on monolithic integration of p-i-n photodiodes and single-heterojunction bipolar transistors (HBT) in the InGaAs-InP material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly opened eyes for data rates of 40 Gb/s at a wavelength of 1550 nm.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1550 nm; 40 Gbit/s; InGaAs-InP; InGaAs-InP optical receiver module; conversion gain; electrical broad-band mounting; heterojunction bipolar transistor; monolithic integration; p-i-n photodiode; packaging; Bipolar transistors; Chemical technology; Epitaxial growth; Heterojunction bipolar transistors; Monolithic integrated circuits; Optical materials; Optical receivers; PIN photodiodes; Packaging; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.817498

Filename

817498