Title :
CMOS dynamic-RAMs approach static RAM speeds
Author :
Eaton, S. Sheffield ; Allan, James D. ; Brady, Jim
Abstract :
The advantages of CMOS circuitry for dynamic RAM (DRAM) performance are discussed. First, static and dynamic memories are compared. Then, address multiplexing techniques for DRAMs are considered, and it is shown how CMOS circuitry allows effective use of continuously powered-up address buffers (as found in the fastest SRAMs). The overall improvement in DRAM design is illustrated by reference to the IMS2800, a CMOS 256K×1 DRAM.
Keywords :
CMOS integrated circuits; integrated memory circuits; large scale integration; random-access storage; CNOS dynamic-RAMs; DRAM design; IMS2800; address multiplexing techniques; powered-up address buffers; speeds; CMOS integrated circuits; Clocks; MOS devices; Memory management; Random access memory; Sensors; Transistors;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1985.6311741
