• DocumentCode
    1291265
  • Title

    Device advantages of DI-LDD/LDD MOSFET over DD MOSFET

  • Author

    Hanafi, Hussein I.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    1
  • Issue
    6
  • fYear
    1985
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Different device structures, double-diffused (DD), lightly doped drain (LDD), and double-implanted lightly doped drain (DI-LDD), have been proposed to improve source/drain breakdown voltage and the hot electron-induced degradation in micron/submicron MOSFETs. The author compares these three structures, utilizing the finite-element device analysis program, and presents the device advantages of DI-LDD/LDD MOSFETs over DD MOSFETs.
  • Keywords
    finite element analysis; insulated gate field effect transistors; MOSFETs; double-diffused; double-implanted lightly doped drain; finite-element device analysis; hot electron-induced degradation; lightly doped drain; source/drain breakdown voltage; Boron; Capacitance; Degradation; Implants; Logic gates; MOSFET circuits; Substrates;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.1985.6311742
  • Filename
    6311742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1291265