65-, 45-, and 32-nm Aluminium and Copper Transmission-Line Model at Millimeter-Wave Frequencies

Author

Quémerais, Thomas ; Moquillon, Laurence ; Fournier, Jean-Michel ; Benech, Philippe

Author_Institution

STMicroelectronics, Crolles, France

Volume

58

Issue

9

fYear

2010

Firstpage

2426

Lastpage

2433

Abstract

An improved analytical model of the CMOS 65-, 45-, and 32-nm silicon technology integrated transmission line is proposed. This model is derived from previous classical ones used for printed circuits board lines. Improvements have been performed to take into account the size of integrated lines. The study is validated up to millimeter-wave frequencies for different linewidths realized with various metal levels. Accurate results allow the model to be implemented in commercial computer-aided design software commonly used for millimeter-wave designs. A comparison with commercial tools is carried out.

Keywords

CMOS integrated circuits; MIMIC; aluminium; circuit CAD; copper; microstrip lines; Al; CMOS silicon technology; Cu; aluminium transmission-line model; commercial computer-aided design software; copper transmission-line model; integrated transmission line; millimeter-wave designs; millimeter-wave frequencies; printed circuit board lines; size 32 nm; size 45 nm; size 65 nm; Aluminum; Analytical models; CMOS technology; Calibration; Copper; Frequency; Impedance; Mathematical model; Metals; Microstrip; Millimeter wave integrated circuits; Millimeter wave technology; Semiconductor device modeling; Silicon; Strips; Transmission line measurements; Transmission lines; 45- and 32-nm technologies; CMOS 65 nm; interconnect levels; microstrip lines; millimeter-wave frequency;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2058277

Filename

5545458