• DocumentCode
    1291326
  • Title

    Compact and comprehensive database for ion-implanted As profile

  • Author

    Suzuki, Kunihiro ; Sudo, Ritsuo ; Feudel, Thomas ; Fichtner, Wolfgang

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    47
  • Issue
    1
  • fYear
    2000
  • fDate
    1/1/2000 12:00:00 AM
  • Firstpage
    44
  • Lastpage
    49
  • Abstract
    We succeeded in explaining dose dependent As ion implantation profiles with a Monte Carlo simulation, and extracted parameters for our proposed analytical profile model from the systematic Monte Carlo data. We proposed a compact database to cover energy, dose, rotation, and oxide thickness dependence
  • Keywords
    Monte Carlo methods; doping profiles; ion implantation; semiconductor process modelling; Monte Carlo simulation; Si:As; analytical profile model; dose dependent ion implantation profiles; oxide thickness; rotation; Amorphous materials; Annealing; Crystallization; Data mining; Databases; Impurities; Ion implantation; Modeling; Monte Carlo methods; Tail;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.817565
  • Filename
    817565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1291326