Title :
Compact and comprehensive database for ion-implanted As profile
Author :
Suzuki, Kunihiro ; Sudo, Ritsuo ; Feudel, Thomas ; Fichtner, Wolfgang
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
1/1/2000 12:00:00 AM
Abstract :
We succeeded in explaining dose dependent As ion implantation profiles with a Monte Carlo simulation, and extracted parameters for our proposed analytical profile model from the systematic Monte Carlo data. We proposed a compact database to cover energy, dose, rotation, and oxide thickness dependence
Keywords :
Monte Carlo methods; doping profiles; ion implantation; semiconductor process modelling; Monte Carlo simulation; Si:As; analytical profile model; dose dependent ion implantation profiles; oxide thickness; rotation; Amorphous materials; Annealing; Crystallization; Data mining; Databases; Impurities; Ion implantation; Modeling; Monte Carlo methods; Tail;
Journal_Title :
Electron Devices, IEEE Transactions on
