DocumentCode :
1291390
Title :
Temperature Dependence of Optical Gain and Loss in 2- 
m InP Lasers
Author :
Salhi, Ali ; Pei Chun Chi ; Alharbi, Ayman ; Petrich, Gale S. ; Al-Muhanna, A. ; Kolodziejski, Leslie A.
Author_Institution :
King Abdulaziz City for Sci. & Technol., Nat. Nanotechnol. Res. Center, Riyadh, Saudi Arabia
Volume :
23
Issue :
20
fYear :
2011
Firstpage :
1523
Lastpage :
1525
Abstract :
Temperature-dependent optical gain, loss, and internal quantum efficiency have been measured for continuous-wave operated 2- μm InP laser from 10 °C to 70 °C using the Hakki-Paoli method. Modal gain and loss were extracted from the measured amplified spontaneous emission. The optical loss is constant with temperature, while the material gain decreases from 1128 cm-1 at 10 °C to 427 cm-1 at 70 °C. The internal efficiency decreases from 74% to 37% at 10 °C and 50 °C , respectively. The temperature sensitivity of threshold current is due to the decrease of the differential gain and a degradation of internal quantum efficiency.
Keywords :
III-V semiconductors; indium compounds; optical loss measurement; optical losses; quantum well lasers; superradiance; Hakki-Paoli method; InP; amplified spontaneous emission; continuous-wave operation; internal quantum efficiency; material gain; modal gain; modal loss; size 2 mum; temperature 10 degC to 70 degC; temperature sensitivity; temperature-dependent optical gain; temperature-dependent optical loss; threshold current; Indium phosphide; Laser modes; Optical losses; Semiconductor lasers; Temperature; Temperature measurement; Temperature sensors; Indium phosphide; optical losses; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2163793
Filename :
5976370
Link To Document :
