Title :
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFETs
Author :
Xu, J.P. ; Lai, P.T. ; Cheng, Y.C.
Author_Institution :
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fDate :
1/1/2000 12:00:00 AM
Abstract :
AC-stress-induced degradation of 1/f noise is investigated for n-MOSFETs with thermal oxide or nitrided oxide as gate dielectric, and the physical mechanisms involved are analyzed. It is found that the degradation of 1/f noise under AC stress is far more serious than that under DC stress. For an ac stress of VG=0~0.5 VD, generations of both interface states (ΔDit) and neutral electron traps (ΔNet) are responsible for the increase of 1/f noise, with the former being dominant. For another AC stress of V G=0~VD. a large increase of 1/f noise is observed for the thermal-oxide device, and is attributed to enhanced ΔNet and generation of another specie of electron traps, plus a small amount of ΔDit. Moreover, under the two types of AC stress conditions, much smaller degradation of 1/f noise is observed for the nitrided device due to considerably improved oxide/Si interface and near-interface oxide qualities associated with interfacial nitrogen incorporation
Keywords :
1/f noise; MOSFET; dielectric thin films; electron traps; interface states; semiconductor device noise; semiconductor device reliability; 1/f noise; AC-stress-induced degradation; DC stress; dynamic-stress-induced enhanced degradation; gate dielectric; interface states; n-MOSFETs; near-interface oxide qualities; neutral electron traps; nitrided oxide; physical mechanisms; thermal oxide; thermal-oxide device; AC generators; Annealing; Dielectrics; Electron traps; Hot carriers; Integrated circuit noise; MOSFET circuits; Noise generators; Thermal degradation; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
