Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

Author

López-villanueva, Juan A. ; Cartujo-Cassinello, Pedro ; Gámiz, Francisco ; Banqueri, Jesús ; Palma, Alberto J.

Author_Institution

Dept. de Electron., Granada Univ., Spain

Volume

47

Issue

1

fYear

2000

fDate

1/1/2000 12:00:00 AM

Firstpage

141

Lastpage

146

Abstract

The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFETs, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET´s over their conventional counterparts are discussed

Keywords

MOSFET; carrier density; inversion layers; minority carriers; DGMOSFET; double-gate MOSFETs; inversion-layer centroid; minority-carrier distribution; volume-inversion transistors; Charge carrier density; Electrons; Lead compounds; MOSFET circuits; Phonons; Scattering; Silicon; Thermal resistance; Thin film devices; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.817579

Filename

817579