A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique

Author

Lin, Chi-Hsien ; Chang, Hong-Yeh

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

20

Issue

9

fYear

2010

Firstpage

507

Lastpage

509

Abstract

This letter presents a high efficiency broadband fully integrated class-E power amplifier (PA) using a 0.5 μm enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process. The proposed PA is based on a class-E topology with a reactance compensation technique. To achieve high efficiency and broad bandwidth, the reactance compensation component is employed in the load network of the class-E PA. From 1.5 to 3.8 GHz, this circuit demonstrates a power added efficiency (PAE) of 62% and an output 1 dB compression point (P_{1 dB}) of higher than 27 dBm.

Keywords

UHF amplifiers; high electron mobility transistors; microwave amplifiers; power amplifiers; wideband amplifiers; class-E topology; efficiency 62 percent; enhancement-depletion-pseudomorphic high-electron mobility transistor process; frequency 1.5 GHz to 3.8 GHz; high efficiency broadband class-E power amplifier; power added efficiency; reactance compensation technique; size 0.5 mum; Bandwidth; Broadband amplifiers; Broadband communication; Circuits; Frequency; Frequency measurement; Gain; HEMTs; High power amplifiers; MMICs; MODFETs; Mobile communication; PHEMTs; Power measurement; Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT); high efficiency; power amplifier (PA); reactance compensation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2056675

Filename

5545480