Title :
A novel low noise IMPATT diode
Author :
Herbert, D.C. ; Davies, R.G.
Author_Institution :
DERA Electron. Sector, Malvern, UK
fDate :
1/1/2000 12:00:00 AM
Abstract :
IMPATT diodes are currently the main solid state source of power at the higher millimeter-wave frequencies, but can suffer from high noise levels, low efficiency and low reliability, particularly when driven for high power. In the present paper a new concept is proposed which can yield essentially noise free avalanche multiplication at high frequency and should improve both efficiency and reliability. The proposed structures require a layer of narrow gap material adjacent to a wide gap avalanche zone
Keywords :
IMPATT diodes; avalanche breakdown; millimetre wave diodes; narrow band gap semiconductors; power semiconductor diodes; semiconductor device noise; IMPATT diode; avalanche multiplication; efficiency; high power diodes; millimeter-wave frequencies; narrow gap material; noise levels; reliability; wide gap avalanche zone; Circuits; Diodes; Frequency; Gallium arsenide; Noise level; Optical noise; Optical resonators; Optical saturation; Power generation; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
