Title :
Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs
Author :
Mateos, Javier ; González, Tomás ; Pardo, Daniel ; Hoel, Virginie ; Happy, Henri ; Cappy, Alain
Author_Institution :
Dept. de Fisica Aplicada, Salamanca Univ., Spain
fDate :
1/1/2000 12:00:00 AM
Abstract :
A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMTs has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation in the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics of recessed δ-doped HEMTs
Keywords :
III-V semiconductors; Monte Carlo methods; Poisson equation; Schrodinger equation; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; AlInAs-GaInAs; HEMTs; Monte Carlo algorithm; complicated layer structure; electron degeneracy; nonequilibrium screening; quantum Schrodinger-Poisson simulation; recessed δ-doped devices; static characteristics; Computational modeling; Electron microscopy; Fabrication; HEMTs; Heterojunctions; Hot carrier effects; Impurities; Monte Carlo methods; Particle scattering; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
