DocumentCode
1291551
Title
CMOS — The emerging VLSI technology
Author
Chen, John Y.
Author_Institution
Xerox Palo Alto Res. Center, CA, USA
Volume
2
Issue
2
fYear
1986
fDate
3/1/1986 12:00:00 AM
Firstpage
16
Lastpage
31
Abstract
The recent evolution in CMOS as the emerging very-large-scale-integrated (VLSI) circuit technology is reviewed. Various CMOS technologies and their impact on circuit performance and reliability are discussed and compared in generic and special circuit applications. Key issues in CMOS scaling, such as hot-electron effects, buried-channel characteristics, latchup, and isolation requirements, are briefly described. State-of-the-art CMOS design rules are also addressed. Future trends of CMOS technology development in VLSI circuits are discussed.
Keywords
CMOS integrated circuits; VLSI; circuit reliability; integrated circuit technology; CMOS; CMOS scaling; VLSI technology; buried-channel characteristics; circuit performance; circuit reliability; hot-electron effects; isolation requirements; latchup; CMOS integrated circuits; CMOS technology; MOS devices; Random access memory; Substrates; Transistors; Very large scale integration;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.1986.6311801
Filename
6311801
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