DocumentCode :
1291881
Title :
A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers
Author :
Bastida, E.M. ; Corso, V. ; Finardi, C.A. ; Fischer, R.A. ; Patiri, V.
Author_Institution :
R&D Center, TELEBRAS, Campinas, Brazil
Volume :
7
Issue :
10
fYear :
1997
Firstpage :
317
Lastpage :
319
Abstract :
A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMICs) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-μm GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.
Keywords :
MMIC amplifiers; circuit CAD; digital communication; field effect MMIC; integrated circuit design; optical receivers; wideband amplifiers; 0.5 micron; 5 Gbit/s; GaAs; GaAs FET technology; MMIC transimpedance amplifiers; design method; high-bit-rate operation; highspeed transimpedance amplifier; large-volume industrial production; mass producible amplifier; monolithic microwave integrated circuits; Field effect MMICs; Gallium arsenide; Integrated circuit technology; Integrated circuit yield; Microwave FET integrated circuits; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Optimized production technology;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.631187
Filename :
631187
Link To Document :
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