A design approach for mass producible high-bit-rate MMIC transimpedance amplifiers

Author

Bastida, E.M. ; Corso, V. ; Finardi, C.A. ; Fischer, R.A. ; Patiri, V.

Author_Institution

R&D Center, TELEBRAS, Campinas, Brazil

Volume

7

Issue

10

fYear

1997

Firstpage

317

Lastpage

319

Abstract

A full design approach for developing very highspeed transimpedance amplifier (TIA) monolithic microwave integrated circuits (MMICs) to be economically produced in large quantities is described. As an application example, the letter reports design, experimental performances, yield, and size data for a 5-Gb/s MMIC TIA using a low-cost 0.5-μm GaAs field-effect transistor (FET) technology, showing outstanding experimental performances and optimized for a large-volume industrial production.

Keywords

MMIC amplifiers; circuit CAD; digital communication; field effect MMIC; integrated circuit design; optical receivers; wideband amplifiers; 0.5 micron; 5 Gbit/s; GaAs; GaAs FET technology; MMIC transimpedance amplifiers; design method; high-bit-rate operation; highspeed transimpedance amplifier; large-volume industrial production; mass producible amplifier; monolithic microwave integrated circuits; Field effect MMICs; Gallium arsenide; Integrated circuit technology; Integrated circuit yield; Microwave FET integrated circuits; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Optimized production technology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.631187

Filename

631187