DocumentCode :
1292054
Title :
V-M.O.S. improves efficiency through switching performance
Author :
Regan, P.
Author_Institution :
Siliconix Ltd., Swansea, UK
Volume :
25
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
629
Lastpage :
633
Abstract :
Since the first commercially available 2 A V-metal-oxide-semiconductor (V-m.o.s.) transistor in late 1975, development has been continued by Siliconix and others to extend the current and voltage capabilities of V-m.o.s. and other m.o.s. power structures, which will enable a wider range of application to be achieved in future, especially in the fields of power conversion and motor control. Lower current devices will also be required for general logic interface and signal switching applications, and these areas are not being neglected
fLanguage :
English
Journal_Title :
Electronics and Power
Publisher :
iet
ISSN :
0013-5127
Type :
jour
DOI :
10.1049/ep.1979.0365
Filename :
5197890
Link To Document :
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