Title :
Modeling GaAs/AlGaAs devices: A critical review
Author :
Bennett, Herbert S.
Author_Institution :
NBS, Gaithersburg, MD, USA
Abstract :
Device models for GaAs devices and GaAs/AlGaAs heterostructures are much less advanced than those for silicon devices. The author critically reviews recent advances in the modeling of GaAs/AlGaAs devices. The review is based on an examination of five selected device models that contain features common to the majority of device models for heterostructure bipolar and field effect transistors. Areas requiring improved measurement techniques on processed GaAs and improved physical concepts for GaAs/AlGaAs devise models are identified.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; field effect transistors; gallium arsenide; p-n heterojunctions; reviews; semiconductor device models; FET; GaAs/AlGaAs devices; III-V semiconductors; bipolar devices; field effect transistors; heterostructures; modeling; review; Computational modeling; Equations; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MODFETs; Mathematical model;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1985.6311922
