Extraction of Subgap Donor States in a-IGZO TFTs by Generation–Recombination Current Spectroscopy

Author

Bae, Minkyung ; Kim, Yongsik ; Kim, Sungchul ; Kim, Dong Myong ; Kim, Dae Hwan

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

32

Issue

9

fYear

2011

Firstpage

1248

Lastpage

1250

Abstract

A physics-based generation-recombination current (JG r) spectroscopy is proposed for the extraction of the sub gap donorlike density of states (DOS) of amorphous InGaZnO thin-film transistors. Physics-based Shockley-Read-Hall recombination through the subgap DOS over the bandgap is fully considered, and the potential for the carrier concentration is calculated through the DeAOTS model. The extracted parameters for the exponential deep donorlike states are N_DD = 5.5 × 10²¹ [cm^-3 · eV^-1] and kT_DD = 0.115 [eV].

Keywords

carrier density; gallium compounds; indium compounds; spectroscopy; thin film transistors; DeAOTS model; InGaZnO; carrier concentration; exponential deep donorlike states; physics-based Shockley-Read-Hall recombination; physics-based generation-recombination current spectroscopy; subgap donorlike density of states; thin film transistors; Current measurement; Logic gates; Spectroscopy; Stress; Thin film transistors; Voltage measurement; Amorphous InGaZnO (a-IGZO); generation–recombination (G–R) current; subgap donorlike density of states (DOS); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2160835

Filename

5976998