DocumentCode :
1292212
Title :
Fabrication and Analysis of Epitaxially Grown Ge 
Sn 
Microdisk Resonator With 20-nm Fre
Author :
Seongjae Cho ; Chen, Ru Shan ; Sukmo Koo ; Shambat, Gary ; Lin, Huiming ; NamKyoo Park ; Vuckovic, Jelena ; Kamins, Theodore I. ; Byung-Gook Park ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
23
Issue :
20
fYear :
2011
Firstpage :
1535
Lastpage :
1537
Abstract :
In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.
Keywords :
germanium alloys; integrated optics; micro-optics; molecular beam epitaxial growth; optical resonators; tin alloys; whispering gallery modes; GeSn; epitaxially grown microdisk resonator; free spectral range; integrated optics; molecular beam epitaxy; optical modes; wavelength 1550 nm; whispering gallery mode; Optical device fabrication; Optical fibers; Optical resonators; Optical variables control; Silicon; Substrates; Free-spectral range (FSR); GeSn; infrared (IR); microdisk resonator; molecular beam epitaxy (MBE); whispering gallery mode (WGM);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2163929
Filename :
5977001
Link To Document :
