Title :
Circuit utilization characteristics of MOS-controlled thyristors
Author :
Jahns, Thomas M. ; De Doncker, Rik W A A ; Wilson, James W.A. ; Temple, Victor A K ; Watrous, Donald L.
Author_Institution :
General Electric Co., Schenectady, NY, USA
Abstract :
The purpose of this paper is to provide an insight into the present state of MOS-controlled thyristor (MCT) development as reflected in measured device terminal characteristics. User-oriented information regarding MCT circuit utilization is presented by focusing on the measured characteristics of a particular batch of MCTs (80 A, 500 V) fabricated in 1988. Measurements confirm the appealingly low forward voltage drop of the MCTs (1.1 V at 200 A/cm2, 1500°C). To increase current handling capabilities, eight matched devices have been paralleled to switch 600 A at 275 V (peak), representing a modest 6% device current derating. Measured MCT turn on is faster than turn off, which is dominated by internal charge recombination characteristics. Safe operating area and di/dt limits of the tested MCTs are discussed. Comparison with insulated-gate bipolar transistors (IGBTs) indicates that MCTs offer clear advantages for minimizing on-state conduction losses (approximately 3:1 at 150°C), whereas switching times of new MCTs are as low as those of comparable IGBTs
Keywords :
metal-insulator-semiconductor devices; semiconductor device testing; switching; thyristor applications; thyristors; 275 V; 500 V; 600 A; 80 A; IGBTs; MOS-controlled thyristors; circuit utilization; conduction losses; current handling; development; device terminal characteristics; forward voltage drop; insulated-gate bipolar transistors; internal charge recombination; semiconductor device testing; switching; turn off; turn on; Charge measurement; Circuits; Current measurement; Insulated gate bipolar transistors; Low voltage; MOSFETs; Particle measurements; Switches; Testing; Thyristors;
Journal_Title :
Industry Applications, IEEE Transactions on
