Title :
High-speed GaInAs/InP multiquantum well avalanche photodiodes grown by atmospheric-pressure MOCVD
Author :
Moseley, A.J. ; Urquhart, J. ; Riffat, J.R.
Author_Institution :
Plessey Res. Caswell Ltd., Towcester
fDate :
3/17/1988 12:00:00 AM
Abstract :
Reports the performance of the first high speed GaInAs/InP multi-quantum well avalanche photodiodes grown by atmospheric pressure MOCVD. The multi-quantum well avalanche region of the device consists of 50 periods of 150 Å wells and barriers forming the intrinsic region of a pin structure. Avalanche multiplication up to a factor of 25 has been measured at DC together with high-speed response giving a maximum measured RF gain of 16 and a gain-bandwidth product in excess of 25 GHz
Keywords :
III-V semiconductors; avalanche photodiodes; chemical vapour deposition; gallium arsenide; indium compounds; 150 A; 25 GHz; GaInAs-InP; atmospheric-pressure MOCVD; gain-bandwidth product; high-speed response; intrinsic region; measured RF gain; multiquantum well avalanche photodiodes; pin structure;
Journal_Title :
Electronics Letters
