New high-speed (Al, Ga) as modulation doped field-effect transistors

Author

Fischer, Russ ; Morkoç, Hadis

Volume

1

Issue

4

fYear

1985

fDate

7/1/1985 12:00:00 AM

Firstpage

35

Lastpage

38

Abstract

Recent advances in the fabrication technology of compound semiconductors have made possible the development of a new type of device called the modulation doped field-effect transistor (MODFET) which is capable of higher speeds than conventional FETs because its conduction electrons can move faster. These higher electron velocities in MODFETs are due to the fact that the electrons are spatially separated from ionized donors which leads to a reduction in scattering. By utilizing this enhanced velocity in real devices, substantial performance improvements in both microwave and digital circuits have been obtained. Subnanosecond access times for 1 Kb static random access memory and frequency division at 13 GHz have been obtained in MODFET-based digital circuits. In the microwave area, MODFETs show great promise in low-noise amplifier applications, as noise figures for MODFETs operated at 300K are below 0.6 dB at 8 GHz.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; (Al,Ga)As; 13 GHz; 8 GHz; HEMT; III-V semiconductors; MODFET; SRAM application; TEGFET; digital circuits; electron velocities; frequency division; high electron mobility transistor; high-speed operation; low-noise amplifier applications; modulation doped field-effect transistors; solid-state microwave devices; static random access memory; subnanosecond access times; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; Logic gates; MESFETs; MODFETs;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.1985.6311991

Filename

6311991